Please use this identifier to cite or link to this item: https://idr.l2.nitk.ac.in/jspui/handle/123456789/16300
Title: High-Intensity Ultrasound-Assisted Low-Temperature Formulation of Lanthanum Zirconium Oxide Nanodispersion for Thin-Film Transistors
Authors: Pujar P.
Madaravalli Jagadeeshkumar K.K.
Naqi M.
Gandla S.
Cho H.W.
Jung S.H.
Cho H.K.
Kalathi J.T.
Kim S.
Issue Date: 2020
Citation: ACS Applied Materials and Interfaces Vol. 12 , 40 , p. 44926 - 44933
Abstract: The process complexity, limited stability, and distinct synthesis and dispersion steps restrict the usage of multicomponent metal oxide nanodispersions in solution-processed electronics. Herein, sonochemistry is employed for the in situ synthesis and formulation of a colloidal nanodispersion of high-permittivity (κ) multicomponent lanthanum zirconium oxide (LZO: La2Zr2O7). The continuous propagation of intense ultrasound waves in the aqueous medium allows the generation of oxidant species which, on reaction, form nanofragments of crystalline LZO at ∼80 °C. Simultaneously, the presence of acidic byproducts in the vicinity promotes the formulation of a stable as-prepared LZO dispersion. The LZO thin film exhibits a κ of 16, and thin-film transistors (TFTs) based on LZO/indium gallium zinc oxide operate at low input voltages (≤4 V), with the maximum mobility (μ) and on/off ratio (Ion/Ioff) of 5.45 ± 0.06 cm2 V-1 s-1 and ∼105, respectively. TFTs based on the compound dielectric LZO/Al2O3 present a marginal reduction in leakage current, along with enhancement in μ (6.16 ± 0.04 cm2 V-1 s-1) and Ion/Ioff (∼105). Additionally, a 3 × 3 array of the proposed TFTs exhibits appreciable performance, with a μ of 3-6 cm2 V-1 s-1, a threshold voltage of -0.5 to 0.8 V, a subthreshold swing of 0.3-0.6 V dec-1, and an Ion/Ioff of 1-2.5 (×106). Copyright © 2020 American Chemical Society.
URI: https://doi.org/10.1021/acsami.0c11193
http://idr.nitk.ac.in/jspui/handle/123456789/16300
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