Please use this identifier to cite or link to this item: https://idr.l2.nitk.ac.in/jspui/handle/123456789/16300
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dc.contributor.authorPujar P.
dc.contributor.authorMadaravalli Jagadeeshkumar K.K.
dc.contributor.authorNaqi M.
dc.contributor.authorGandla S.
dc.contributor.authorCho H.W.
dc.contributor.authorJung S.H.
dc.contributor.authorCho H.K.
dc.contributor.authorKalathi J.T.
dc.contributor.authorKim S.
dc.date.accessioned2021-05-05T10:30:08Z-
dc.date.available2021-05-05T10:30:08Z-
dc.date.issued2020
dc.identifier.citationACS Applied Materials and Interfaces Vol. 12 , 40 , p. 44926 - 44933en_US
dc.identifier.urihttps://doi.org/10.1021/acsami.0c11193
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/16300-
dc.description.abstractThe process complexity, limited stability, and distinct synthesis and dispersion steps restrict the usage of multicomponent metal oxide nanodispersions in solution-processed electronics. Herein, sonochemistry is employed for the in situ synthesis and formulation of a colloidal nanodispersion of high-permittivity (κ) multicomponent lanthanum zirconium oxide (LZO: La2Zr2O7). The continuous propagation of intense ultrasound waves in the aqueous medium allows the generation of oxidant species which, on reaction, form nanofragments of crystalline LZO at ∼80 °C. Simultaneously, the presence of acidic byproducts in the vicinity promotes the formulation of a stable as-prepared LZO dispersion. The LZO thin film exhibits a κ of 16, and thin-film transistors (TFTs) based on LZO/indium gallium zinc oxide operate at low input voltages (≤4 V), with the maximum mobility (μ) and on/off ratio (Ion/Ioff) of 5.45 ± 0.06 cm2 V-1 s-1 and ∼105, respectively. TFTs based on the compound dielectric LZO/Al2O3 present a marginal reduction in leakage current, along with enhancement in μ (6.16 ± 0.04 cm2 V-1 s-1) and Ion/Ioff (∼105). Additionally, a 3 × 3 array of the proposed TFTs exhibits appreciable performance, with a μ of 3-6 cm2 V-1 s-1, a threshold voltage of -0.5 to 0.8 V, a subthreshold swing of 0.3-0.6 V dec-1, and an Ion/Ioff of 1-2.5 (×106). Copyright © 2020 American Chemical Society.en_US
dc.titleHigh-Intensity Ultrasound-Assisted Low-Temperature Formulation of Lanthanum Zirconium Oxide Nanodispersion for Thin-Film Transistorsen_US
dc.typeArticleen_US
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