Structural, electrical and optical properties of stoichiometric In2Te3 thin films

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DC Field	Value	Language
dc.contributor.author	Sowjanya, V.
dc.contributor.author	Bangera, K.V.
dc.contributor.author	Shivakumar, G.K.
dc.date.accessioned	2020-03-31T08:45:13Z	-
dc.date.available	2020-03-31T08:45:13Z	-
dc.date.issued	2017
dc.identifier.citation	Ceramics International, 2017, Vol.43, 4, pp.3748-3751	en_US
dc.identifier.uri	http://idr.nitk.ac.in/jspui/handle/123456789/13070	-
dc.description.abstract	In2Te3 thin films were grown by thermal evaporation technique. The annealing of films played a major role to obtain stoichiometry, regardless of substrate temperature. Annealing at 300 ?C resulted in well oriented, mono-phased and nearly stoichiometric In2Te3 thin films. The variation in grain size of In2Te3 films associated with the substrate temperatures provides a significant control over the resistivity of the films, and the resistivity decreased with an increase in the grain size. The activation energy and optical band gap of stoichiometric In2Te3 films were found to be 0.01 0.005 eV and 0.99 0.02 eV, respectively. The absorption co-efficient of these films was found to be of the order of 105 cm?1. 2016 Elsevier Ltd and Techna Group S.r.l.	en_US
dc.title	Structural, electrical and optical properties of stoichiometric In2Te3 thin films	en_US
dc.type	Article	en_US
Appears in Collections:	1. Journal Articles

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