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https://idr.l2.nitk.ac.in/jspui/handle/123456789/11763| Title: | Investigation of hole transport in ?-NPD using impedance spectroscopy with F4TCNQ as hole-injection layer |
| Authors: | Fernandes, J.M. Kiran, M.R. Ulla, H. Satyanarayan, M.N. Umesh, G. |
| Issue Date: | 2015 |
| Citation: | Superlattices and Microstructures, 2015, Vol.83, , pp.766-775 |
| Abstract: | The charge carrier transport is studied in N,N?-di(1-naphthyl)-N,N?-diphenyl-(1,1?-biphenyl)-4,4?-diamine (?-NPD) with the incorporation of sequentially doped p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) as hole-injection layer in hole-only device structures. The field dependent mobility of the charge carriers is determined using frequency dependent capacitance, conductance and impedance methods by varying the thickness of ?-NPD. The Poole-Frenkel zero-field mobility and the Poole-Frenkel coefficient thus obtained for each device in all the three methods is found to be almost constant. 2015 Elsevier Ltd. All rights reserved. |
| URI: | http://idr.nitk.ac.in/jspui/handle/123456789/11763 |
| Appears in Collections: | 1. Journal Articles |
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