Please use this identifier to cite or link to this item:
https://idr.l2.nitk.ac.in/jspui/handle/123456789/8807
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kumar, A.S. | |
dc.contributor.author | Nagaraja, K.K. | |
dc.contributor.author | Nagaraja, H.S. | |
dc.date.accessioned | 2020-03-30T10:22:47Z | - |
dc.date.available | 2020-03-30T10:22:47Z | - |
dc.date.issued | 2015 | |
dc.identifier.citation | IOP Conference Series: Materials Science and Engineering, 2015, Vol.73, 1, pp.- | en_US |
dc.identifier.uri | http://idr.nitk.ac.in/jspui/handle/123456789/8807 | - |
dc.description.abstract | Zinc oxide (ZnO) and tin doped ZnO are wide band gap semiconducting materials with excellent optoelectronic properties. In the present study ZnO and Sn: ZnO films are prepared using polymer assisted sol gel process. The thermal behaviour of the dried gel sample studied using DTA and TG analysis. TG-DTA result shown that most of the organic of PVA and CH3COO group of zinc acetate and other volatiles are removed below 500�C. The effect of Sn on the crystallinity, microstructral properties of the deposited films was investigated. XRD patterns of undoped and Sn doped ZnO films indicate enhanced intensities for the peak corresponding to (002) plane, resulting preferential orientation along the c-axis. The SEM images confirm that the grown films are composed of nanorods. � Published under licence by IOP Publishing Ltd. | en_US |
dc.title | Polymer assisted preparation and characterization of ZnO and Sn doped ZnO nanostructures | en_US |
dc.type | Book chapter | en_US |
Appears in Collections: | 2. Conference Papers |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.