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dc.contributor.authorJavvaji, B.
dc.contributor.authorAjmalghan, M.
dc.contributor.authorRoy, Mahapatra, D.
dc.contributor.authorRahman, M.R.
dc.contributor.authorHegde, G.M.
dc.date.accessioned2020-03-30T10:22:33Z-
dc.date.available2020-03-30T10:22:33Z-
dc.date.issued2015
dc.identifier.citationProceedings of SPIE - The International Society for Optical Engineering, 2015, Vol.9357, , pp.-en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/8673-
dc.description.abstractEngineering of electronic energy band structure in graphene based nanostructures has several potential applications. Substrate induced bandgap opening in graphene results several optoelectronic properties due to the inter-band transitions. Various defects like structures, including Stone-Walls and higher-order defects are observed when a graphene sheet is exfoliated from graphite and in many other growth conditions. Existence of defect in graphene based nanostructures may cause changes in optoelectronic properties. Defect engineered graphene on silicon system are considered in this paper to study the tunability of optoelectronic properties. Graphene on silicon atomic system is equilibrated using molecular dynamics simulation scheme. Based on this study, we confirm the existence of a stable super-lattice. Density functional calculations are employed to determine the energy band structure for the super-lattice. Increase in the optical energy bandgap is observed with increasing of order of the complexity in the defect structure. Optical conductivity is computed as a function of incident electromagnetic energy which is also increasing with increase in the defect order. Tunability in optoelectronic properties will be useful in understanding graphene based design of photodetectors, photodiodes and tunnelling transistors. � 2015 SPIE.en_US
dc.titleOptoelectronic properties of graphene on silicon substrate: Effect of defects in grapheneen_US
dc.typeBook chapteren_US
Appears in Collections:2. Conference Papers

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