Indium Antimonide (InSb) based planar terahertz plasmonic waveguide

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DC Field	Value	Language
dc.contributor.author	Ranjana, J.S.
dc.contributor.author	Bhatt, P.
dc.contributor.author	Surdi, H.
dc.contributor.author	Sangala, B.R.
dc.contributor.author	Satyanarayan, M.N.
dc.contributor.author	Umesh, G.
dc.contributor.author	Prabhu, S.S.
dc.date.accessioned	2020-03-30T10:18:20Z	-
dc.date.available	2020-03-30T10:18:20Z	-
dc.date.issued	2014
dc.identifier.citation	International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 2014, Vol., , pp.-	en_US
dc.identifier.uri	http://idr.nitk.ac.in/jspui/handle/123456789/8283	-
dc.description.abstract	We demonstrate experimental and theoretical studies on the transmission characteristics of Terahertz (THz) Semiconductor-Insulator-Semiconductor (SIS) Planar Plasmonic waveguide made up of Indium Antimonide (InSb). We report tunability of the waveguide characteristics by changing the device geometrical dimensions. The results are of critical importance for optimizing and determining the resonance characteristics of the device. � 2014 IEEE.	en_US
dc.title	Indium Antimonide (InSb) based planar terahertz plasmonic waveguide	en_US
dc.type	Book chapter	en_US
Appears in Collections:	2. Conference Papers

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