Please use this identifier to cite or link to this item: https://idr.l2.nitk.ac.in/jspui/handle/123456789/8123
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dc.contributor.authorJavvaji, B.
dc.contributor.authorRavikumar, A.
dc.contributor.authorShenoy, B.M.
dc.contributor.authorRoy, Mahapatra, D.
dc.contributor.authorRahman, M.R.
dc.contributor.authorHegde, G.M.
dc.date.accessioned2020-03-30T10:18:06Z-
dc.date.available2020-03-30T10:18:06Z-
dc.date.issued2014
dc.identifier.citationProceedings of SPIE - The International Society for Optical Engineering, 2014, Vol.8980, , pp.-en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/8123-
dc.description.abstractSynergizing graphene on silicon based nanostructures is pivotal in advancing nano-electronic device technology. A combination of molecular dynamics and density functional theory has been used to predict the electronic energy band structure and photo-emission spectrum for graphene-Si system with silicon as a substrate for graphene. The equilibrium geometry of the system after energy minimization is obtained from molecular dynamics simulations. For the stable geometry obtained, density functional theory calculations are employed to determine the energy band structure and dielectric constant of the system. Further the work function of the system which is a direct consequence of photoemission spectrum is calculated from the energy band structure using random phase approximations. � 2014 SPIE.en_US
dc.titleElectronic band structure and photoemission spectra of graphene on silicon substrateen_US
dc.typeBook chapteren_US
Appears in Collections:2. Conference Papers

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