Effect of pressure on the band structure of BC3

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DC Field	Value	Language
dc.contributor.author	Manju, M.S.
dc.contributor.author	Harikrishnan, G.
dc.contributor.author	Ajith, K.M.
dc.contributor.author	Valsakumar, M.C.
dc.date.accessioned	2020-03-30T10:02:58Z	-
dc.date.available	2020-03-30T10:02:58Z	-
dc.date.issued	2016
dc.identifier.citation	AIP Conference Proceedings, 2016, Vol.1731, , pp.-	en_US
dc.identifier.uri	http://idr.nitk.ac.in/jspui/handle/123456789/7870	-
dc.description.abstract	Density functional theory (DFT) calculations were carried out to study the effect of pressure on the band structure of two dimensional BC3 sheet. BC3 is a semiconductor at ambient conditions having a band gap of ~0.3 eV. Electronic structure calculations are carried out on BC3 at pressures of 5, 20, 50 and 100 GPa. The system shows a semiconductor - metal transition by the application of pressure without any structural transition. � 2016 Author(s).	en_US
dc.title	Effect of pressure on the band structure of BC3	en_US
dc.type	Book chapter	en_US
Appears in Collections:	2. Conference Papers

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