Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes

Please use this identifier to cite or link to this item: https://idr.l2.nitk.ac.in/jspui/handle/123456789/7533

Title:	Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes
Authors:	Rao, K.G. Bangera, K.V. Shivakumar, G.K.
Issue Date:	2011
Citation:	AIP Conference Proceedings, 2011, Vol.1349, PART A, pp.601-602
Abstract:	p-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined. � 2011 American Institute of Physics.
URI:	http://idr.nitk.ac.in/jspui/handle/123456789/7533
Appears in Collections:	2. Conference Papers

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