Ultra low power active-RC filter in 180 nm CMOS technology

Please use this identifier to cite or link to this item: https://idr.l2.nitk.ac.in/jspui/handle/123456789/6859

Full metadata record

DC Field	Value	Language
dc.contributor.author	Rekha, S.
dc.contributor.author	Laxminidhi, T.
dc.date.accessioned	2020-03-30T09:46:16Z	-
dc.date.available	2020-03-30T09:46:16Z	-
dc.date.issued	2013
dc.identifier.citation	Informal Proceedings of the 11th International Workshop of Electronics, Control, Measurement, Signals and Their Application to Mechatronics, ECMSM 2013, 2013, Vol., , pp.-	en_US
dc.identifier.uri	http://idr.nitk.ac.in/jspui/handle/123456789/6859	-
dc.description.abstract	This paper presents the design of a low voltage, ultra low power fifth order Chebyshev low pass filter operating at a power supply voltage of 0.5 V in 180 nm CMOS technology. A CMOS inverter based transconductor is used as the building block. A sub-threshold model is developed for the transconductor as the transistors are operating in sub-threshold region. A feedforward compensated OTA is designed using this transconductor and is used to realize the filter. Designed filter has a cutoff frequency of 150 kHz and offers a dynamic range of 54.16 dB with a figure of merit of 0.02 fJ. Power consumed by the filter is 21.79 microwatt. � 2013 IEEE.	en_US
dc.title	Ultra low power active-RC filter in 180 nm CMOS technology	en_US
dc.type	Book chapter	en_US
Appears in Collections:	2. Conference Papers

Files in This Item:

There are no files associated with this item.