Please use this identifier to cite or link to this item:
https://idr.l2.nitk.ac.in/jspui/handle/123456789/6850Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shajahan, E.S. | - |
| dc.contributor.author | Bhat, S.M. | - |
| dc.date.accessioned | 2020-03-30T09:46:15Z | - |
| dc.date.available | 2020-03-30T09:46:15Z | - |
| dc.date.issued | 2012 | - |
| dc.identifier.citation | 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings, 2012, Vol., , pp.276-279 | en_US |
| dc.identifier.uri | http://idr.nitk.ac.in/jspui/handle/123456789/6850 | - |
| dc.description.abstract | This paper presents a low voltage, low loss tuned RF MEMS (Radio Frequency Micro Electro Mechanical Systems) capacitive shunt switches for use in X-band. The tunable switch is designed using two shunt beams with meander springs. The switch achieved low actuation voltage along with small up state capacitance. Simulation using CoventorWare shows the actuation voltage as 7.5 Volts and up state capacitance of 47fF. HFSS simulation reveals the insertion loss in the range of (0.1-0.2) dB and up state return loss better than -25 dB in the X-band (8-12 GHz). The switch offers down state isolation of 60 dB at 12 GHz and is better than 40 dB in the frequency range 8-25 GHz. � 2012 IEEE. | en_US |
| dc.title | Tuned dual beam low voltage RF MEMS capacitive switches for X-band applications | en_US |
| dc.type | Book chapter | en_US |
| Appears in Collections: | 2. Conference Papers | |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.