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DC Field | Value | Language |
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dc.contributor.author | Gorre P. | |
dc.contributor.author | Vignesh R. | |
dc.contributor.author | Song H. | |
dc.contributor.author | Kumar S. | |
dc.date.accessioned | 2021-05-05T10:30:25Z | - |
dc.date.available | 2021-05-05T10:30:25Z | - |
dc.date.issued | 2021 | |
dc.identifier.citation | Microelectronics Journal , Vol. 111 , , p. - | en_US |
dc.identifier.uri | https://doi.org/10.1016/j.mejo.2021.105026 | |
dc.identifier.uri | http://idr.nitk.ac.in/jspui/handle/123456789/16414 | - |
dc.description.abstract | This work reports a novel Graphene Field Effect Transistor (GFET) based transimpedance amplifier (TIA) for optical radar detection in medical applications. Design-I includes a microstrip line (MSL) based UWB resonator circuit which enables the TIA design to operate in UWB range of frequency with high Q-factor. Design-II comprises MSL UWB resonator integrated stagger-tuned CR-RGC TIA which enhances the transimpedance limit and mitigates the effect of photodiode capacitance results in higher bandwidth performance. The proposed TIA realizes a 2.6 times lesser noise compared to the conventional CR-RGC TIA. A flat transimpedance gain of 64 dBΩ and ultra-low input-referred noise current density of 8.9 pA/√Hz are achieved using gain and noise optimization methods. Additionally, a dynamic range of 49 dB with a group delay variation (GDV) of ±25 ps is achieved over the entire UWB range. The TIA demonstrates a 25 Gb/s data rate while a bit-error-rate (BER) less than 10−10 is achieved. The chip occupies an area of 0.67∗0.72 mm2 while consuming power of 19 mW under the supply voltage of 1.8 V. © 2021 Elsevier Ltd | en_US |
dc.title | A 64 dBΩ, 25 Gb/s GFET based transimpedance amplifier with UWB resonator for optical radar detection in medical applications | en_US |
dc.type | Article | en_US |
Appears in Collections: | 1. Journal Articles |
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