Please use this identifier to cite or link to this item: https://idr.l2.nitk.ac.in/jspui/handle/123456789/15982
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dc.contributor.authorBarman B.
dc.contributor.authorBangera K.V.
dc.contributor.authorShivakumar G.K.
dc.date.accessioned2021-05-05T10:29:41Z-
dc.date.available2021-05-05T10:29:41Z-
dc.date.issued2019
dc.identifier.citationMaterials Research Express , Vol. 6 , 12 , p. -en_US
dc.identifier.urihttps://doi.org/10.1088/2053-1591/ab5df0
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/15982-
dc.description.abstractThe absorption loss in cadmium sulfide (CdS) thin films which are widely used as a window layer in a photovoltaic cell limits the efficiency of the device. This issue can be addressed by ZnxCd1-xS thin films due to its tunable band gap nature. Herein, the various composition of ZnxCd1-xS (x=0, 0.15, 0.30, 0.45, 0.70, 0.85, 1) thin films were grown by a vacuum thermal evaporation technique and the characteristics of the films were investigated by varying the composition 'x'. The x-ray diffraction (XRD) studies displayed that the as-deposited films consist of diffraction peaks from both CdS and ZnS lattice. The formation of ternary ZnxCd1-xS films was verified when the deposited films were subjected to an annealing treatment. The morphology of the films was analyzed using a scanning electron microscope (SEM) and it was observed that the films are uniform, homogeneous and free from any pin-holes and cracks. The presence of Zn, Cd and S elements were quantized using an energy dispersive spectroscopy. Optical studies showed a successful non-linear band gap engineering (2.42-3.49 eV) for the deposited ZnxCd1-xS thin films. All films showed a very high optical transmittance of above 70% in the visible wavelength region. © 2020 IOP Publishing Ltd.en_US
dc.titleA comprehensive study on the structural, morphological, compositional and optical properties of ZnxCd1-xS thin filmsen_US
dc.typeArticleen_US
Appears in Collections:1. Journal Articles

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