Please use this identifier to cite or link to this item: https://idr.l2.nitk.ac.in/jspui/handle/123456789/15386
Full metadata record
DC FieldValueLanguage
dc.contributor.authorRaveendra Kiran M.
dc.contributor.authorUlla H.
dc.contributor.authorSatyanarayan M.N.
dc.contributor.authorUmesh G.
dc.date.accessioned2021-05-05T10:26:59Z-
dc.date.available2021-05-05T10:26:59Z-
dc.date.issued2020
dc.identifier.citationSuperlattices and Microstructures Vol. 148 , , p. -en_US
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2020.106718
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/15386-
dc.description.abstractIn this study, the resistance switching (RS) behaviour of the fabricated devices with the configuration: ITO/ZnO (x annealing temperature)/Al were investigated. It was observed that the area of a hysteresis loop in the Current-Voltage characteristics was reduced with increase in ZnO annealing temperature. Correspondingly, the on/off ratio of the RS also gets reduced. The hysteresis behaviour was highly consistent and repeatable for the films annealed at 150 °C. The films annealed at 450 °C did not show any RS behaviour. Under the high current condition, a reproducible RS behaviour was observed. This was attributed to the synergetic effects of lowering of the barrier height at electrode/ZnO interface and the increase in the grain size with the annealing temperatures. The RS behaviour is ascribed to the conduction mechanism at the ITO/ZnO interface. © 2020 Elsevier Ltden_US
dc.titleEffects of annealing temperature on the resistance switching behaviour of solution-processed ZnO thin filmsen_US
dc.typeArticleen_US
Appears in Collections:1. Journal Articles

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.