Please use this identifier to cite or link to this item: https://idr.l2.nitk.ac.in/jspui/handle/123456789/14906
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dc.contributor.authorMathew S.
dc.contributor.authorNithin N.
dc.contributor.authorRao R.
dc.date.accessioned2021-05-05T10:15:58Z-
dc.date.available2021-05-05T10:15:58Z-
dc.date.issued2020
dc.identifier.citation2020 International Conference on Computational Performance Evaluation, ComPE 2020 , Vol. , , p. 359 - 361en_US
dc.identifier.urihttps://doi.org/10.1109/ComPE49325.2020.9200016
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/14906-
dc.description.abstractThis work analyses the influence of dielectric constant of spacer on the electrical characteristics as well as on two vital short channel effect parameters i.e DIBL and Subthreshold Swing of Dual Material Gate Junctionless FinFET (DMG-JLFinFET). Various spacer materials each with different dielectric constant, were used for 3D TCAD simulations. It was observed that high κ spacers gave higher value of ON current. Increase in leakage current was also observed for high κ spacers at higher negative gate bias. Subthreshold Swing (SS) as well as Drain Induced Barrier Lowering (DIBL) had reduced extensively with the increase in dielectric constant of spacer. © 2020 IEEE.en_US
dc.titleInvestigations on the Effect of Spacer Dielectrics on the DC Characteristics of Dual Material Gate Junctionless FinFETsen_US
dc.typeConference Paperen_US
Appears in Collections:2. Conference Papers

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