Please use this identifier to cite or link to this item: https://idr.l2.nitk.ac.in/jspui/handle/123456789/14905
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dc.contributor.authorMathew S.
dc.contributor.authorNithin
dc.contributor.authorBhat K.N.
dc.contributor.authorRao R.
dc.date.accessioned2021-05-05T10:15:58Z-
dc.date.available2021-05-05T10:15:58Z-
dc.date.issued2020
dc.identifier.citationProceedings of CONECCT 2020 - 6th IEEE International Conference on Electronics, Computing and Communication Technologies , Vol. , , p. -en_US
dc.identifier.urihttps://doi.org/10.1109/CONECCT50063.2020.9198438
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/14905-
dc.description.abstractThis paper investigates the influence of gate material work function on the electrical characteristics as well as short channel effects exhibited by Dual Material Gate-Junctionless FinFETs (DMG-JLFinFETs) with channel length as low as 10 nm. 3D TCAD simulations performed on these devices show that various device parameters like threshold voltage, ON-current, etc, are influenced by the work function difference between the control gate and screen gate material of DMG-JLFinFET. DMG-JLFinFETs exhibit very low Drain Induced Barrier Lowering (DIBL), far lesser than its Single Material Gate (SMG) counterpart. Subthreshold Swing (SS) of DMG devices is higher than SMG devices. The optimal ratio of control gate length to total gate length in DMG-JLFinFET is found to be between 0.5 and 1 for better suppression of short channel effects. © 2020 IEEE.en_US
dc.titleInvestigations on the effect of Dual Material Gate work function on DIBL and Subthreshold Swing in Junctionless FinFETsen_US
dc.typeConference Paperen_US
Appears in Collections:2. Conference Papers

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