Please use this identifier to cite or link to this item: https://idr.l2.nitk.ac.in/jspui/handle/123456789/12649
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dc.contributor.authorKumar, A.S.
dc.contributor.authorNagaraja, K.K.
dc.contributor.authorHuang, N.M.
dc.contributor.authorNagaraja, H.S.
dc.date.accessioned2020-03-31T08:41:55Z-
dc.date.available2020-03-31T08:41:55Z-
dc.date.issued2014
dc.identifier.citationMaterials Letters, 2014, Vol.123, , pp.149-152en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/12649-
dc.description.abstractAbstract Hydrophilic Sn doped TiO2 nanostructured thin films have been fabricated using a sol-gel method, and followed by calcination at 450 C. The samples are characterized by means of XRD, Raman, SEM and contact angle measurements. The XRD and Raman studies revealed that, the higher Sn doping content (3 at%) leads to the formation of mixed phases of TiO2. SEM micrographs revealed that all samples are porous in nature. The contact angle of TiO2 nanostructured films varied between 19 and 37 depending upon the Sn content. All the samples are photoelectrochemically active and 2% Sn doping significantly enhances the photoelectrochemical ability of TiO 2 film. The highest photocurrent density of 20 ?A cm-2 is measured for 2 at% Sn doped TiO2 in 0.2 M Na2SO 4 electrolyte, on light irradiation. Time dependent photoresponse tests have been carried out by measuring the photocurrent under chopped light irradiation. 2014 Elsevier B.V.en_US
dc.titlePreparation, characterization and photoelectrochemical properties of hydrophilic Sn doped TiO2 nanostructuresen_US
dc.typeArticleen_US
Appears in Collections:1. Journal Articles

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