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DC Field | Value | Language |
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dc.contributor.author | Pujar, P. | |
dc.contributor.author | Gupta, D. | |
dc.contributor.author | Mandal, S. | |
dc.date.accessioned | 2020-03-31T08:35:59Z | - |
dc.date.available | 2020-03-31T08:35:59Z | - |
dc.date.issued | 2019 | |
dc.identifier.citation | Journal of Materials Science: Materials in Electronics, 2019, Vol., , pp.- | en_US |
dc.identifier.uri | http://idr.nitk.ac.in/jspui/handle/123456789/11961 | - |
dc.description.abstract | We present high performance, low voltage (? 3 V) operation of thin film transistors (TFTs) with indium zinc tin oxide (IZTO: In 4 Sn 4 ZnO 15 )-semiconductor. The film of IZTO was fabricated via low-temperature (200 C) solution combustion processing without incorporating an external fuel. As 2-methoxyethanol is a widely used organic solvent due to its high dissolution capability, serve the purpose of both the solvent and the fuel. On quantification from the balanced redox reaction, 0.3% of 2-methoxyethanol assisted for the action of fuel and helped in the formation of metal oxide, and the rest (99.7%) served the purpose of being dissolution medium. The balanced redox chemistry yielded a significant fraction of (56.5%) metal oxide at 200 C confirmed via high-resolution oxygen 1s spectrum. Further, the chemically derived thin film of sodium ?-alumina with a dielectric constant of ~ 21, while annealing at 350 C incorporated in the TFT for the realization of low voltage operation. The performance assessment is systematically carried out both silicon dioxide (SiO 2 ) and sodium ?-alumina and found that the TFTs with SiO 2 and IZTO exhibited a saturation mobility ( sat ), I on /I off ratio and the threshold voltage (V th ) of 0.50 0.02 cm 2 V ?1 s ?1 , 1.25 10 4 and 6.6 0.79 V respectively. While changing the dielectric to sodium ?-alumina presented a sat , I on /I off ratio and V th of 4.21 0.18 cm 2 V ?1 s ?1 , 1.4 10 2 and 0.47 0.08 V respectively. 2019, Springer Science+Business Media, LLC, part of Springer Nature. | en_US |
dc.title | High-performance low voltage operation of indium zinc tin oxide thin film transistors using chemically derived sodium ?-alumina dielectric | en_US |
dc.type | Article | en_US |
Appears in Collections: | 1. Journal Articles |
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