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DC Field | Value | Language |
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dc.contributor.author | Kishor, Kumar, M.J. | |
dc.contributor.author | Kalathi, J.T. | |
dc.date.accessioned | 2020-03-31T08:35:58Z | - |
dc.date.available | 2020-03-31T08:35:58Z | - |
dc.date.issued | 2018 | |
dc.identifier.citation | Journal of Alloys and Compounds, 2018, Vol.748, , pp.348-354 | en_US |
dc.identifier.uri | http://idr.nitk.ac.in/jspui/handle/123456789/11951 | - |
dc.description.abstract | Lanthanum (La) doped Cerium Oxide (CeO2) nanopowder was synthesized at a relatively lower temperature (70 C), without calcination in a simple, faster, and efficient way through sonochemical method. X-ray diffraction (XRD) results confirmed the formation of a cubic fluorite structure of nanocrystalline CeO2 and lattice deformation due to La-doping in CeO2. TEM analysis revealed that the size of La-doped CeO2 particles is in the range of 20?50 nm. In addition, selective area electron diffraction (SAED) and high-resolution TEM (HRTEM) analyses portrayed the nano-crystallinity, lattice fringe pattern, and d-spacing details of La-doped CeO2 powder. Lanthanum doping in CeO2 was further confirmed by a shift in Raman band towards the lower frequency (from 464 cm?1 to 457cm?1) along with peak intensity increase. Photoluminescence (PL) emission spectra showed that emission intensity of the La-doped CeO2 at 510 nm is increased due to oxygen vacancy mediated charge transfer. All these results confirm the successful doping of La in CeO2. The La-doped CeO2 powder possesses a high dielectric constant (?r) of 106 and a low dielectric loss (tan ?) of < 0.4 % at 1 kHz. The La-doped CeO2 finds potential applications on developing devices in the field of a thin film capacitor, transistors, and solid oxide fuel cells. 2018 Elsevier B.V. | en_US |
dc.title | Low-temperature sonochemical synthesis of high dielectric Lanthanum doped Cerium oxide nanopowder | en_US |
dc.type | Article | en_US |
Appears in Collections: | 1. Journal Articles |
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