Please use this identifier to cite or link to this item: https://idr.l2.nitk.ac.in/jspui/handle/123456789/11951
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dc.contributor.authorKishor, Kumar, M.J.
dc.contributor.authorKalathi, J.T.
dc.date.accessioned2020-03-31T08:35:58Z-
dc.date.available2020-03-31T08:35:58Z-
dc.date.issued2018
dc.identifier.citationJournal of Alloys and Compounds, 2018, Vol.748, , pp.348-354en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/11951-
dc.description.abstractLanthanum (La) doped Cerium Oxide (CeO2) nanopowder was synthesized at a relatively lower temperature (70 C), without calcination in a simple, faster, and efficient way through sonochemical method. X-ray diffraction (XRD) results confirmed the formation of a cubic fluorite structure of nanocrystalline CeO2 and lattice deformation due to La-doping in CeO2. TEM analysis revealed that the size of La-doped CeO2 particles is in the range of 20?50 nm. In addition, selective area electron diffraction (SAED) and high-resolution TEM (HRTEM) analyses portrayed the nano-crystallinity, lattice fringe pattern, and d-spacing details of La-doped CeO2 powder. Lanthanum doping in CeO2 was further confirmed by a shift in Raman band towards the lower frequency (from 464 cm?1 to 457cm?1) along with peak intensity increase. Photoluminescence (PL) emission spectra showed that emission intensity of the La-doped CeO2 at 510 nm is increased due to oxygen vacancy mediated charge transfer. All these results confirm the successful doping of La in CeO2. The La-doped CeO2 powder possesses a high dielectric constant (?r) of 106 and a low dielectric loss (tan ?) of < 0.4 % at 1 kHz. The La-doped CeO2 finds potential applications on developing devices in the field of a thin film capacitor, transistors, and solid oxide fuel cells. 2018 Elsevier B.V.en_US
dc.titleLow-temperature sonochemical synthesis of high dielectric Lanthanum doped Cerium oxide nanopowderen_US
dc.typeArticleen_US
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