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Please use this identifier to cite or link to this item: https://idr.l2.nitk.ac.in/jspui/handle/123456789/11441
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dc.contributor.authorShreekanthan, K.N.-
dc.contributor.authorRajendra, B.V.-
dc.contributor.authorKasturi, V.B.-
dc.contributor.authorShivakumar, G.K.-
dc.date.accessioned2020-03-31T08:31:24Z-
dc.date.available2020-03-31T08:31:24Z-
dc.date.issued2003-
dc.identifier.citationCrystal Research and Technology, 2003, Vol.38, 1, pp.30-33en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/11441-
dc.description.abstractSemiconducting thin films of cadmium selenide have been grown by conventional thermal evaporation technique. The effect of various growth parameters like rate of deposition and deposition temperature has been studied in detail. Films deposited at room temperature are cadmium rich with segregated selenium globules. A deposition temperature of 453K has been found to yield stoichiometric, homogeneous films. The films have been analysed for optical band gap and thermal activation energies. Films of low electrical resistivity have been obtained for possible applications.en_US
dc.titleGrowth and characterization of semiconducting cadmium selenide thin filmsen_US
dc.typeArticleen_US
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