Please use this identifier to cite or link to this item: https://idr.l2.nitk.ac.in/jspui/handle/123456789/10144
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dc.contributor.authorNimith, K.M.
dc.contributor.authorSterin, N.S.
dc.contributor.authorDas, P.P.
dc.contributor.authorUmesh, G.
dc.contributor.authorSatyanarayan, M.N.
dc.date.accessioned2020-03-31T08:18:39Z-
dc.date.available2020-03-31T08:18:39Z-
dc.date.issued2019
dc.identifier.citationSynthetic Metals, 2019, Vol.250, , pp.99-103en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/10144-
dc.description.abstractLight emitting polymer poly [2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) is blended with a wide bandgap electron transport material benzothiadiazole (BT) and its effect on the electronic properties has been studied by capacitance and impedance spectroscopy (IS) in PLEDs. The impedance data is fitted using equivalent circuit models and the minimum parallel resistance (Rp) at zero bias have been obtained for 1:3 ratio of MEH-PPV:BT blended devices. The negative capacitance (NC) shows the occurrence of the trap-assisted non-radiative recombination mechanism at low frequencies in the unblended MEH-PPV PLEDs. Further, this behavior is seen to be reduced in PLEDs with MEH-PPV:BT blends. This clearly suggests that the blending of MEH-PPV and BT at different weight ratios results in the suppression of trap-assisted recombination. This can be attributed to the elimination of trap states due to the dilution of semiconductor material on account of the addition of wide bandgap host material. Moreover, the blended devices have shown a significant improvement in the conductivity at small bias voltages. 2019 Elsevier B.V.en_US
dc.titleCapacitance and impedance spectroscopy studies of polymer light emitting diodes based on MEH-PPV:BT blendsen_US
dc.typeArticleen_US
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